Radiation Resistance Studies of PIN Diode Detectors Irradiated with Heavy Ions

The controlled destruction of the PIN diode detectors, SIEMENS SFH 870/F170 and 871/F171, by 35 MeV beam 12C 24 14N, respectively, was characterized using nuclear spectroscopy, surface profile measurements, positron annihilation spectroscopy technique. fluence in range 1012–1014 ions/cm2. It has been shown that 1012 ions/cm2 did not allow it to destroy detector. For this purpose, one needs at least 4 x for 14N ions 2.2 1013 one. presence divacancies irradiated sample detected lifetimes with fraction significantly higher implanted sample. Furthermore, found roughness changed drastically following implantation, i.e., arithmetic average height deviations from mean is than reference one, about 2–3 times higher.